參數(shù)資料
型號： IRFI5210
廠商： International Rectifier
英文描述： -100V,-23A,P-Channel HEXFET Power MOSFET(-100V,-23A,P溝道HEXFET功率MOS場效應(yīng)管)
中文描述： - 100V的，- 23A條，P通道HEXFET功率MOSFET（- 100V的，- 23A條，P溝道的HEXFET功率馬鞍山場效應(yīng)管）
文件頁數(shù)： 2/8頁
文件大小： 143K
代理商： IRFI5210
IRFI5210
Parameter
Min. Typ. Max. Units
-100
–––
–––
-0.11
–––
–––
-2.0
–––
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
–––
86
–––
79
–––
81
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= -12A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -50V, I
D
= -21A
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -21A
V
DS
= -80V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -50V
I
D
= -21A
R
G
= 2.5
R
D
= 2.4
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.06
-4.0
–––
-25
-250
100
-100
180
25
97
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
2700 –––
790
450
12
–––
–––
–––
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= -25V, starting T
J
= 25°C, L = 3.1mH
R
G
= 25
, I
AS
= -21A. (See Figure 12)
t=60s, =60Hz
I
SD
≤
-21A, di/dt
≤
-480A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Uses IRF5210 data and test conditions
Pulse width
≤
300μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -12A, V
GS
= 0V
T
J
= 25°C, I
F
= -21A
di/dt = -100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
170
1.2
-1.3
260
1.8
V
ns
μC
Source-Drain Ratings and Characteristics
-23
-140
A
S
D
G
S
D
G
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