參數(shù)資料
型號: IRFI5210
廠商: International Rectifier
英文描述: -100V,-23A,P-Channel HEXFET Power MOSFET(-100V,-23A,P溝道HEXFET功率MOS場效應(yīng)管)
中文描述: - 100V的,- 23A條,P通道HEXFET功率MOSFET(- 100V的,- 23A條,P溝道的HEXFET功率馬鞍山場效應(yīng)管)
文件頁數(shù): 6/8頁
文件大?。?/td> 143K
代理商: IRFI5210
IRFI5210
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-
VDD
DRIVER
A
-20V
15V
0
400
800
1200
1600
2000
25
50
75
100
125
150
175
E
A
A
Starting T , Junction Temperature (°C)
I
TOP -8.6A
-15A
BOTTOM -21A
D
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