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參數(shù)資料
| 型號： | IRFL110 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.54ohm，身份證\u003d 1.5A的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 244K |
| 代理商： | IRFL110 |
Parameter
Max.
1.5
0.96
12
3.1
2.0
0.025
0.017
-/+20
150
1.5
0.31
5.5
-55 to + 150
300 (1.6mm from case)
Units
I
D
@ Tc = 25°C
I
D
@ Tc = 100°C
I
DM
P
D
@Tc = 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10 V
Continuous Drain Current, V
GS
@ 10 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
IRFL110
HEXFET
Power MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Repetitive Avalanche Rated
l
Fast Switching
l
Ease of Paralleling
l
Simple Drive Requirements
PD - 90861A
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.54
I
D
= 1.5A
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
1/28/99
Description
SOT-223
** When mounted on 1'' square pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
Parameter
Typ.
–––
–––
Max.
40
60
Units
R
θ
JC
R
θ
JA
Junction-to-PCB
Junction-to-Ambient. (PCB Mount)**
Thermal Resistance
°C/W
A
1
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFL110PBF | 功能描述:MOSFET N-Chan 100V 1.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL110TR | 功能描述:MOSFET N-Chan 100V 1.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL110TRPBF | 功能描述:MOSFET N-Chan 100V 1.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL210 | 功能描述:MOSFET N-Chan 200V 0.96 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL210PBF | 功能描述:MOSFET N-Chan 200V 0.96 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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