參數(shù)資料
型號： IRFL110
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.54ohm，身份證\u003d 1.5A的）
文件頁數(shù)： 2/8頁
文件大?。?/td> 244K
代理商： IRFL110
IRFL110
2
www.irf.com
R
DS(on)
V
GS(th)
g
fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
–––
2.0
1.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.9
16
15
0.54
4.0
–––
25
250
100
-100
8.3
2.3
3.8
–––
–––
–––
V
S
V
GS
= 10V, I
D
= 0.90A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 0.90A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 5.6A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 5.6A
R
G
= 24
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
f
Fall Time ––– 9.4 ––– R
D
= 8.4
,
See Fig. 10
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
nC
ns
nH
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
180
81
15
–––
–––
–––
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
5.6A, di/dt
≤
75A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
V
DD=
25V, starting T
J
= 25°C, L = 25 mH
R
G
= 25
, I
AS
= 3.0A (See Figure 12)
Pulse width
≤
300μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.6A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
100
0.44
2.5
200
0.88
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
–––
–––
–––
12
1.5
A
S
D
G
Between lead, 6mm(0.25in)
from package and center
of die contact.
L
S
Internal Source Inductance
Internal Drain Inductance
L
D
––– 4.0 –––
––– 6.0 –––
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.63
–––
V/°C
Reference to 25°C, I
D
= 1mA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
V
GS
= 0V, I
D
= 250μA
Parameter
Min. Typ. Max. Units
Conditions
Source-Drain Ratings and Characteristics
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