參數(shù)資料
型號： IRFP15N60L
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 1/9頁
文件大小： 171K
代理商： IRFP15N60L
IRFP15N60L
SMPS MOSFET
HEXFET Power MOSFET
V
DSS
R
DS(on)
typ.
Trr
typ.
600V
385m
Features and Benefits
!
"
TO-247AC
02/14/03
www.irf.com
1
S
D
G
Applications
#$
%$
&$
#'
I
D
15A
130ns
Absolute Maximum Ratings
Parameter
Max.
15
9.7
60
280
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°CContinuous Drain Current, V
GS
@ 10V
I
DM
P
D
@T
C
= 25°C Power Dissipation
A
Pulsed Drain Current
W
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
2.3
±30
W/°C
V
V
GS
dv/dt
T
J
T
STG
10
V/ns
-55 to + 150
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
300 (1.6mm from case )
1.1(10)
Nm (lbfin)
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
15
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
A
showing the
integral reverse
I
SM
–––
–––
60
p-n junction diode.
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
T
J
= 25°C, I
F
= 15A
T
J
= 125°C, di/dt = 100A/μs
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
T
J
= 125°C, di/dt = 100A/μs
T
J
= 25°C
V
SD
t
rr
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
130
240
450
1080 1620
5.8
1.5
200
360
670
V
ns
Q
rr
Reverse Recovery Charge
nC
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
8.7
A
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參數(shù)描述
IRFP15N60LPBF 功能描述:MOSFET N-Chan 600V 15 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP17N50L 功能描述:MOSFET N-Chan 500V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP17N50LPBF 功能描述:MOSFET N-Chan 500V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP17N50LS 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)
IRFP21N60L 功能描述:MOSFET N-Chan 600V 21 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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