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參數(shù)資料
| 型號： | IRFP245 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 14 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 68K |
| 代理商： | IRFP245 |
5-3
IRFP244, IRFP245, IRFP246, IRFP247
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 11)
-
1300
-
pF
Output Capacitance
C
OSS
-
320
-
pF
Reverse Transfer Capacitance
C
RSS
-
69
-
pF
Internal Drain Inductance
L
D
Measured fRom the
Drain Lead, 6mm
(0.25in) From Pack-
age to the Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from The
Source Lead, 6mm
(0.25in) from the
Header to the Source
Bonding Pad
-
12.5
-
nH
Junction to Case
R
θ
JC
-
-
0.83
o
C/W
Junction to Ambient
R
θ
JA
Free Air Operation
-
-
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
15
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
60
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 15A, V
GS
= 0V (Figure 13)
-
-
1.8
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
150
300
640
ns
Reverse Recovered Charge
Q
RR
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
1.6
3.4
7.2
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 4.0
μ
H, R
G
= 25
, peak I
AS
= 15A. See Figures 15, 16.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| IRFP246 | 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRFP247 | 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRFP250 | 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強型功率MOS場效應管) |
| IRFP254 | Standard Power MOSFET - N-Channel Enhancement Mode |
| IRFP254 | Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP246 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFP247 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRFP250 | 功能描述:MOSFET N-Chan 200V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP250_R4941 | 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP250A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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