參數(shù)資料
型號(hào)： IRFP245
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
中文描述： 14 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 5/7頁(yè)
文件大小： 68K
代理商： IRFP245
5-5
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
25
20
15
0
10
I
D
,
PULSE DURATION = 80
μ
s
5
V
GS
= 10V
V
GS
= 5.5V
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 4.0V
V
GS
= 6.0V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
10
1
0.1
0
2
4
6
8
10
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
V
DS
≥
50V
60
I
D
, DRAIN CURRENT (A)
15
30
45
0
75
2.5
2.0
1.5
0
1.0
r
D
,
V
GS
= 20V
0.5
V
GS
= 10V
PULSE DURATION = 80
μ
s
O
)
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
2.4
1.2
0
0
60
120
160
O
-20
-40
20
40
100
140
I
D
= 10A
V
GS
= 10V
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
-20
20
100
160
B
0
-40
40
80
120 140
I
D
= 250
μ
A
1
10
100
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3000
2400
1800
1200
600
0
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
IRFP244, IRFP245, IRFP246, IRFP247
相關(guān)PDF資料
PDF描述
IRFP246 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
IRFP250 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
IRFP254 Standard Power MOSFET - N-Channel Enhancement Mode
IRFP254 Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP246 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFP247 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
IRFP250 功能描述:MOSFET N-Chan 200V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250_R4941 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
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