參數(shù)資料
型號: IRFR2405
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 55V的,的Rds(on)\u003d 0.016ohm,身份證\u003d 56A條)
文件頁數(shù): 10/10頁
文件大?。?/td> 129K
代理商: IRFR2405
10
www.irf.com
IRFR/U2405
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFO RMS TO EIA-481 & EIA-541.
NO TES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 3/00
相關(guān)PDF資料
PDF描述
IRFU2407 Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A)
IRFR2407 Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A)
IRFU3708 HEXFET Power MOSFET for High Frequency DC-DC Isolated Converters(用于高頻DC-DC隔離轉(zhuǎn)換器的N溝道HEXFET功率MOS場效應(yīng)管)
IRFR3708 Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A)
IRFU3709PBF HEXFET㈢Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR2405PBF 功能描述:MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR2405TR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 56A 3-Pin(2+Tab) DPAK T/R
IRFR2405TRL 功能描述:MOSFET N-CH 55V 56A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFR2405TRLPBF 功能描述:MOSFET MOSFT 55V 56A 16mOhm 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR2405TRPBF 功能描述:MOSFET 55V N-CH HEXFET 16mOhms 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube