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參數(shù)資料
| 型號： | IRFR3710Z |
| 廠商： | International Rectifier |
| 英文描述： | Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi |
| 中文描述： | 專門為汽車應(yīng)用而設(shè)計的，這HEXFET功率MOSFET的采用最新的處理技術(shù)，實現(xiàn)極低的性佝僂病 |
| 文件頁數(shù)： | 10/11頁 |
| 文件大小： | 214K |
| 代理商： | IRFR3710Z |
10
www.irf.com
6.73 (.265)
6.35 (.250)
- A -
6.22 (.245)
5.97 (.235)
- B -
3X0.64 (.025)
0.25 (.010) M A M B
2.28 (.090)
2X
1.14 (.045)
0.76 (.030)
5.46 (.215)
5.21 (.205)
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
9.65 (.380)
8.89 (.350)
3X
2.28 (.090)
1.91 (.075)
1.52 (.060)
1.15 (.045)
4
1 2 3
6.45 (.245)
5.68 (.224)
0.58 (.023)
0.46 (.018)
WEEK = 16
DATE CODE
YEAR = 0
Notes: This part marking information applies to devices produced before 02/26/2001
EXAMPLE:
LOT CODE 9U1P
THIS IS AN IRFR120
WITH ASSEMBLY
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
9U
1P
016
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
ASSEMBLY
EXAMPLE:
WITH ASSEMBLY
LOT CODE 5678
THIS IS AN IRFR120
YEAR 9 = 1999
WEEK 19
DATE CODE
LINE A
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 19, 1999
PART NUMBER
Notes: This part marking information applies to devices produced after 02/26/2001
56
IRFU120
919A
78
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFU3710Z | Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi |
| IRFR3711PBF | HEXFET Power MOSFET |
| IRFU3711PBF | HEXFET Power MOSFET |
| IRFR3711ZPBF | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| IRFU3711ZPBF | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.2 to 5.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR3710ZHR | 制造商:International Rectifier 功能描述:100V 42.000A HR LEADED - Rail/Tube |
| IRFR3710ZPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3710ZPBF | 制造商:International Rectifier 功能描述:MOSFET N 140W D-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 140W, D-PAK |
| IRFR3710ZPBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:140W |
| IRFR3710ZTR | 功能描述:MOSFET N-CH 100V 42A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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