參數(shù)資料
型號： IRFU9120
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P溝道功率MOS場效應(yīng)管)
中文描述： 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 4/7頁
文件大小： 73K
代理商： IRFU9120
4-86
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-14
-10
-1
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
I
A
,
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
E
AS
= 210mJ
CONDITIONS:
V
DD
= -25V, I
AS
= -5.6A,
L = 10mH, STARTING T
J
= 25
o
C
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
If R = 0
0
0
-2
-4
-6
-8
-10
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-2
-4
-6
-12
V
GS
= -4.5V
V
GS
= -20V
-8
-10
T
C
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
I
D
,
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
150
o
C
25
o
C
-3
-6
-12
-9
V
DD
= -15V
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
2.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -3.4A
O
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
T
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= -250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -250
μ
A
IRFR9120, IRFU9120
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFU9120_R4941 功能描述:MOSFET TO-251 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU9120N 功能描述:MOSFET P-CH 100V 6.6A I-PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFU9120NHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK
IRFU9120NPBF 功能描述:MOSFET MOSFT P-Ch -100V -6.5A 480mOhm 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU9120PBF 功能描述:MOSFET P-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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