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參數(shù)資料
| 型號： | IRFU9120 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 73K |
| 代理商： | IRFU9120 |
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IRFR9120, IRFU9120
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR9120 | 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P溝道功率MOS場效應(yīng)管) |
| IRL80 | GaAs-Infrarot-Sendediode GaAs Infrared Emitter |
| IRL80A | GaAs-Infrarot-Sendediode GaAs Infrared Emitter |
| IRL81 | GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter |
| IRL81A | GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU9120_R4941 | 功能描述:MOSFET TO-251 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU9120N | 功能描述:MOSFET P-CH 100V 6.6A I-PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFU9120NHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK |
| IRFU9120NPBF | 功能描述:MOSFET MOSFT P-Ch -100V -6.5A 480mOhm 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU9120PBF | 功能描述:MOSFET P-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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