參數(shù)資料
型號(hào): IRFU9120N
廠商: International Rectifier
英文描述: P Channel Straight Lead HEXFET Power MOSFET(P溝道HEXFET功率MOS場(chǎng)效應(yīng)管)
中文描述: P通道直鉛HEXFET功率MOSFET的性(P溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 117K
代理商: IRFU9120N
IRFR/U9120N
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
200
400
600
800
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
5
Q , Total Gate Charge (nC)
10
15
20
25
0
4
8
12
16
20
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-4.0 A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
0.2
0.8
1.4
2.0
2.6
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
°
T = 150 C
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
10us
100us
1ms
10ms
相關(guān)PDF資料
PDF描述
IRFR9210PBF M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PRQP0100JB-A (100P6S-A)
IRFU9210PBF M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PLQP0100KB-A (100P6Q-A)
IRFR9210 Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
IRFU9210 Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
IRFR9214PBF HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0ヘ , ID = -2.7A )
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