參數(shù)資料
型號(hào)： IRFU9120N
廠商： International Rectifier
英文描述： P Channel Straight Lead HEXFET Power MOSFET(P溝道HEXFET功率MOS場(chǎng)效應(yīng)管)
中文描述： P通道直鉛HEXFET功率MOSFET的性（P溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 7/10頁(yè)
文件大小： 117K
代理商： IRFU9120N
IRFR/U9120N
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
[ ] ***
V
DD
[ ]
I
SD
[ ]
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Reverse Polarity of D.U.T for P-Channel
V
GS
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For P-Channel HEXFETS
相關(guān)PDF資料
PDF描述
IRFR9210PBF M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PRQP0100JB-A (100P6S-A)
IRFU9210PBF M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PLQP0100KB-A (100P6Q-A)
IRFR9210 Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
IRFU9210 Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
IRFR9214PBF HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0ヘ , ID = -2.7A )
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFU9120NHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK
IRFU9120NPBF 功能描述:MOSFET MOSFT P-Ch -100V -6.5A 480mOhm 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU9120PBF 功能描述:MOSFET P-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU9121 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-251
IRFU9210 功能描述:MOSFET P-Chan 200V 1.9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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