參數(shù)資料
型號(hào)： IRGB4060DPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 301K
代理商： IRGB4060DPBF
IRGB4060DPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 100 μH, R
G
= 47
.
Pulse width limited by max. junction temperature.
θ
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
Typ. Max. Units Conditions
—
—
V
0.3
—
V/°C V
GE
= 0V, I
c
= 250 μA ( 25 -175
o
C )
1.55
1.85
I
C
= 8A, V
GE
= 15V, T
J
= 25°C
2.00
—
V
I
C
= 8A, V
GE
= 15V, T
J
= 150°C
1.95
—
I
C
= 8A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 250 μA
-18
—
mV/°C V
CE
= V
GE
, I
C
= 250 μA ( 25 -175
o
C )
5.6
—
S
V
CE
= 50V, I
C
= 8A, PW =80
μ
s
1
25
μA
V
GE
= 0V,V
CE
= 600V
400
—
μA
V
GE
= 0v, V
CE
= 600V, T
J
=175°C
1.80
2.80
V
I
F
= 8A
1.30
—
I
F
= 8A, T
J
= 175°C
—
±100
nA
V
GE
= ± 20 V
Ref.Fig
V
GE
= 0V,I
c
=100 μA
V
CE(on)
Collector-to-Emitter Saturation Voltage
5,6,7,9,
10 ,11
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
—
—
—
—
—
—
—
8
V
FM
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
19
29
5
7
8
12
70
115
145
195
215
310
30
39
15
21
95
106
20
26
Ref.Fig
I
C
= 8A
V
CC
= 400V
V
GE
= 15V
I
C
= 8A, V
CC
= 400V, V
GE
= 15V
R
G
= 47
, L=1mH, L
S
= 150nH, T
J
= 25°C
24
nC
CT1
μJ
CT4
Energy losses include tail and diode reverse recovery
I
C
= 8A, V
CC
= 400V
ns
R
G
= 47
, L=1mH, L
S
= 150nH
T
J
= 25°C
CT4
165
240
405
28
17
117
35
—
—
—
—
—
—
—
—
—
—
I
C
= 8A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 47
, L=1mH, L
S
= 150nH, T
J
= 175°C
13,15
CT4
Energy losses include tail and diode reverse recovery
I
C
= 8A, V
CC
= 400V
ns
R
G
= 47
, L=1mH, L
S
= 150nH
T
J
= 175°C
WF1,WF2
14,16
CT4
WF1,WF2
535
45
15
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
T
J
= 175°C, I
C
= 32A
V
CC
= 480V, Vp =600V
R
G
= 47
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
R
G
= 47
, V
GE
= +15V to 0V
T
J
= 175
o
C
V
CC
= 400V, I
F
= 8A
V
GE
= 15V, Rg = 47
, L=1mH, L
S
=150nH
22
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
22, CT3
WF4
Erec
Reverse recovery energy of the diode
Diode Reverse recovery time
165
60
μJ
ns
17,18,19
trr
Irr
20,21
Peak Reverse Recovery Current
14
A
WF3
Diode Forward Voltage Drop
Collector-to-Emitter Leakage Current
SCSOA
Short Circuit Safe Operating Area
5
μs
pF
CT6
9,10,11,12
Conditions
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