參數(shù)資料
型號(hào)： IRGPH50M
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 1200伏，@和VGE \u003d 15V的，集成電路\u003d 23A條）
文件頁數(shù)： 2/6頁
文件大小： 255K
代理商： IRGPH50M
C-472
IRGPH50M
Notes:
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
89
—
22
—
26
—
42
—
32
—
280
—
190
—
1.6
—
3.3
—
4.9
10
—
Conditions
130
33
39
—
—
820
410
—
—
11
—
I
C
= 23A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 23A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
nC
See Fig. 8
ns
mJ
See Fig. 9, 10, 11, 14
μs
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0
, V
CPK
< 1000V
T
J
= 150°C,
I
C
= 23A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
32
21
490
440
10
13
1900
140
24
—
—
—
—
—
—
—
—
—
ns
mJ
nH
pF
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
1200
—
20
—
—
1.1
—
2.3
—
3.0
—
2.8
3.0
—
—
-13
11
15
—
—
—
—
—
—
Conditions
—
—
—
2.9
—
—
5.5
—
—
250
2000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 23A
I
C
= 42A
I
C
= 23A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 23A
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temp. Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
mV/°C
S
μA
I
GES
Gate-to-Emitter Leakage Current
nA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 5.0
, ( See fig. 13a )
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