參數(shù)資料
型號(hào)： IRGR3B60KD2
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/13頁
文件大?。?/td> 257K
代理商： IRGR3B60KD2
IRGR3B60KD2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Voltage
2
www.irf.com
V
= 80% (V
), V
= 15V, L = 100μH, R
= 100
.
When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended
footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
Min.
600
—
—
—
3.5
—
—
—
—
—
—
—
Typ. Max. Units Conditions
—
—
V
0.32
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
1.9
2.4
I
C
= 3.0A, V
GE
= 15V
2.2
2.6
V
I
C
= 3.0A, V
GE
= 15V, T
J
= 150°C
4.5
5.5
V
CE
= V
GE
, I
C
= 250μA
-8.5
—
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
1.9
—
S
V
CE
= 50V, I
C
= 3.0A, PW = 80μs
1.0
150
μA
V
GE
= 0V, V
CE
= 600V
200
500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.5
1.8
V
I
F
= 3.0A, V
GE
= 0V
1.5
1.8
I
F
= 3.0A, V
GE
= 0V, T
J
= 150°C
—
±100
nA
V
GE
= ±20V, V
CE
= 0V
Ref.Fig.
V
GE
= 0V, I
C
= 500μA
5,6,7
9,10,11
V
GE(th)
V
GE(th)
/
T
J
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
9,10,11
12
V
FM
Diode Forward Voltage Drop
8
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
Gate-to-Emitter Leakage Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ. Max. Units
13
20
1.5
2.3
6.6
9.9
62
75
39
50
100
120
18
22
15
21
110
120
68
80
91
100
98
140
190
230
18
22
17
22
120
140
91
105
190
—
23
—
6.6
—
Conditions
Ref.Fig.
I
C
= 3.0A
V
CC
= 400V
V
GE
= 15V
I
C
= 3.0A, V
CC
= 400V
μJ V
GE
= 15V, R
G
= 100
, L = 2.5mH
T
J
= 25°C
I
C
= 3.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 100
, L = 2.5mH
T
J
= 25°C
23
nC
CT1
CT4
CT4
I
C
= 3.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100
, L = 2.5mH
T
J
= 150°C
I
C
= 3.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 100
, L = 2.5mH
T
J
= 150°C
CT4
μJ
13,15
WF1,WF2
14,16
CT4
WF1
WF2
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 15.6A, Vp = 600V
V
CC
=500V,V
GE
=+15V to 0V,R
G
= 100
T
J
= 150°C, Vp = 600V, R
G
= 100
V
CC
=360V,V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 400V, I
F
= 3.0A, L = 2.5mH
V
GE
= 15V, R
G
= 100
pF
22
4
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
μs
CT3
WF4
Erec
t
rr
I
rr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
—
—
—
38
77
4.8
44
84
5.3
μJ
ns
A
17,18,19
20,21
CT4,WF3
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IRGR3B60KD2PBF 功能描述:IGBT 晶體管 600V Non Punch Thru Short Cir Ratd IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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