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參數(shù)資料
| 型號(hào)： | IRHF8230 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR |
| 中文描述： | 重復(fù)性雪崩和dv /受好評(píng)的HEXFET胸苷？？晶體管 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 302K |
| 代理商： | IRHF8230 |
IRHF7230, IRHF8230,JANSR-,JANSH-,2N7262 Devices
www.irf.com
5
Post-Irradiation
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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