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參數(shù)資料
| 型號(hào)： | IRHF8230 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR |
| 中文描述： | 重復(fù)性雪崩和dv /受好評(píng)的HEXFET胸苷？？晶體管 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 302K |
| 代理商： | IRHF8230 |
IRHF7230, IRHF8230,JANSR-,JANSH-,2N7262 Devices
6
www.irf.com
Radiation Characterstics
Fig 11.
Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 10.
Typical Output Characteristics
Pre-Irradiation
Fig 12.
Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 13.
Typical Output Characteristics
Post-Irradiation 1 Mega Rads (Si)
Note: Bias Conditions during radiation: V
GS
= 12 Vdc, V
DS
= 0 Vdc
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