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參數(shù)資料
| 型號： | IRHNA593260 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 2） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | IRHNA593260 |
IRHNA597260
Pre-Irradiation
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
1.6
Units
Test Conditions
0.42
—
soldered to a 2” square copper-clad board
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
-35.5
-142
-5.0
450
5.5
Test Conditions
—
—
—
—
—
V
ns
μ
C
T
j
= 25°C, IS = -35.5A, VGS = 0V
Tj = 25°C, IF =-35.5A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Parameter
Min. Typ. Max. Units
-200
—
—
0.25
—
—
—
—
0.102
—
—
-2.0
—
23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0 — nH Measured from the center of
Conditions
V
GS
= 0V, I
D
= - 1.0mA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -12V, I
D
= -35.5A
V
GS
= -12V, I
D
= -22.5A
V
GS
= -12V, I
D
= -22.5A,T
J
=125°C
V
DS
= V
GS
, I
D
= -1mA
V
DS
> -15V, I
D
= -22.5 A
V
DS
= -200V, V
GS
= 0V
V
DS
= -160V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -35.5A
V
DS
= -100V
V
GS
= -12V
V
DD
= -100V, I
D
= -35.5A
V
GS
= -12V, R
G
= 2.35
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
—
—
0.11
V
V/°C
0.2
-4.0
—
-10
-25
-100
100
180
60
40
35
80
100
200
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
drain pad to center of source pad
Input Capacitanc
—
7170
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + LD
nC
ns
C
iss
—
V
GS
= 0V, V
DS
= -25V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
C
rss
Reverse Transfer Capacitance
—
86
—
C
oss
Output Capacitance
—
920
—
pF
= 1.0MHz
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