參數(shù)資料
型號(hào): IRHNA593260
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
中文描述: 抗輻射功率MOSFET表面貼裝系統(tǒng)(SMD - 2)
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 119K
代理商: IRHNA593260
www.irf.com
7
Pre-Irradiation
IRHNA597260
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
-12 V
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
-12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
25
50
75
100
125
150
0
100
200
300
400
500
600
Starting T , Junction Temperature( C)
E
ID
-16A
-22.5A
-35.5A
TOP
BOTTOM
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
V
DD
DRIVER
A
15V
-20V
tp
V
(BR)DSS
I
AS
+
-
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