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參數(shù)資料
| 型號： | IRHNA8Z60 |
| 廠商： | International Rectifier |
| 英文描述： | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗輻射N溝道HEXFET晶體管) |
| 中文描述： | 30Volt，0.009Ω，RAD數(shù)據通信硬的HEXFET（30V的，0.009Ω，抗輻射?溝道的HEXFET晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | IRHNA8Z60 |
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHNA7Z60
IRHNA8Z60
N-CHANNEL
MEGA RAD HARD
PD - 91701B
Product Summary
Part Number
IRHNA7Z60
IRHNA8Z60
Features:
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
LightWeight
BV
DSS
30V
30V
R
DS(on)
0.009
W
0.009
W
I
D
75*A
75*A
30 Volt, 0.009
W
, RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Addi-
tionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and temperature
stability of the electrical parameters. They are well-suited for
applications such as switching power supplies, motor con-
trols, inverters, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
www.irf.com
1
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRHNA7Z60, IRHNA8Z60
75*
75*
300
300
2.4
± 20
500
75
30
0.35
-55 to 150
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5 sec.)
3.3 (typical)
g
Pre-Irradiation
o
C
A
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