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參數(shù)資料
| 型號(hào)： | IRHNA67160 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 2），100V的，N溝道 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | IRHNA67160 |
www.irf.com
3
Radiation Characteristics
IRHNA67160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Part numbers IRHNA67160 and IRHNA63160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a.
Single Event Effect, Safe Operating Area
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VGS
V
Br
I
Au
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(μm)
@VGS=
0V
@VGS=
-5V
@VGS=
-10V
@VGS=
-15V
@VGS=
-17V
@VGS=
-19V
@VGS=
-20V
Br
I
Au
36.7
59.8
82.3
309
341
350
39.5
32.5
28.4
100
100
100
100
100
100
100
100
-
100
30
-
100
-
-
100
-
-
40
-
-
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 300K Rads (Si)
Min
100
2.0
—
—
—
Units
Test Conditions
Max
—
4.0
100
-100
10
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
=0V
nA
μA
—
0.011
V
GS
= 12V, I
D
= 56A
R
DS(on)
V
SD
Diode Forward Voltage
—
1.2
V
V
GS
= 0V, I
D
= 56A
— 0.010
V
GS
= 12V, I
D
= 56A
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