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參數(shù)資料
| 型號(hào)： | IRHNA67160 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 2），100V的，N溝道 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | IRHNA67160 |
www.irf.com
7
Pre-Irradiation
IRHNA67160
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
EA
ID
TOP 25A
35.4A
BOTTOM 56A
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