參數(shù)資料
型號: IRHNB7260
廠商: International Rectifier
英文描述: 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管)
中文描述: 200Volt,0.070Ω,N溝道美佳RAD數(shù)據(jù)通信硬的HEXFET(為200V,0.070Ω,美佳抗輻射?溝道的HEXFET晶體管)
文件頁數(shù): 4/8頁
文件大?。?/td> 110K
代理商: IRHNB7260
IRHNB7260, IRHNB8260 Devices
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10
100
1000
5
6
V , Gate-to-Source Voltage (V)
7
8
9
10
11
12
VDS
20μs PULSE WIDTH
I
D
T = 25 C
T = 150 C
10
100
1000
1
10
100
20μs PULSE WIDTH
T = 25 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
1000
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
12V
43A
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