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參數(shù)資料
| 型號： | IRHNB7260 |
| 廠商： | International Rectifier |
| 英文描述： | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| 中文描述： | 200Volt，0.070Ω，N溝道美佳RAD數(shù)據(jù)通信硬的HEXFET（為200V，0.070Ω，美佳抗輻射?溝道的HEXFET晶體管） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IRHNB7260 |
IRHNB7260, IRHNB8260 Devices
www.irf.com
7
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature ( C)
E
ID
19A
27A
43A
TOP
BOTTOM
Pre-Irradiation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNB8260 | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNB7264SE | 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,單事件效應(yīng)抗輻射 HEXFET晶體管) |
| IRHNB7Z60 | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNB8Z60 | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNJ54Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNB7264SE | 制造商:International Rectifier 功能描述: |
| IRHNB7360SE | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| IRHNB7460SE | 制造商:International Rectifier 功能描述: |
| IRHNB7Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) |
| IRHNB8064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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