- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377548 > IS41LV16100A-60TI (INTEGRATED SILICON SOLUTION INC) RES 0805 1/8W 5% 2.4K PDF資料下載
參數(shù)資料
| 型號： | IS41LV16100A-60TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | RES 0805 1/8W 5% 2.4K |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-50/44 |
| 文件頁數(shù)： | 21/22頁 |
| 文件大?。?/td> | 144K |
| 代理商： | IS41LV16100A-60TI |
PACKAGING INFORMATION
ISSI
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/29/03
Millimeters
Min
Inches
Min
Millimeters
Min
Inches
Min
Millimeters
Min
Inches
Min
Symbol
No. Leads (N)
A
A1
A2
B
b
C
D
E
E1
E2 9.40 BSC 0.370 BSC 9.40 BSC 0.370 BSC 9.40 BSC 0.370 BSC
e 1.27 BSC 0.050 BSC
1.27 BSC 0.050 BSC
Max
Max
Max
Max
Max
Max
40
42
44
3.25
0.64 —
2.08 —
0.38
0.66
0.18
25.91 26.16
11.05 11.30
10.03 10.29
3.75
0.128
0.025 —
0.082 —
0.015
0.026
0.007
1.020
0.435
0.395
0.148
3.25
0.64 —
2.08 —
0.38
0.66
0.18
27.18
11.05
10.03
3.75
0.128 0.148
0.025 —
0.082 —
0.015 0.020
0.026 0.032
0.007 0.013
1.070 1.080
0.435 0.445
0.395 0.405
3.25
0.64 —
2.08 —
0.38
0.66
0.18
28.45 28.70
11.05 11.30
10.03 10.29
3.75
0.128 0.148
0.025 —
0.082 —
0.015 0.020
0.026 0.032
0.007 0.013
1.120 1.130
0.435 0.445
0.395 0.405
0.51
0.81
0.33
0.020
0.032
0.013
1.030
0.445
0.405
0.51
0.81
0.33
27.43
11.30
10.29
0.51
0.81
0.33
1.27 BSC 0.050 BSC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16100A-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100 | 1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM) |
| IS41LV16105 | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100A-60TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B-50K | 功能描述:動態(tài)隨機(jī)存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16100B-50KI | 功能描述:動態(tài)隨機(jī)存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。