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參數(shù)資料
| 型號(hào)： | IS41LV16100A-60TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | RES 0805 1/8W 5% 2.4K |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-50/44 |
| 文件頁數(shù)： | 22/22頁 |
| 文件大小： | 144K |
| 代理商： | IS41LV16100A-60TI |
Integrated Silicon Solution, Inc.
PACKAGING INFORMATION
Plastic TSOP
Package Code: T (Type II)
Plastic TSOP (T - Type II) (MS 25)
Millimeters
Symbol
Min
Max
Ref. Std.
N
A
1.20
A1
0.05
0.15
b
0.30
0.51
c
0.12
0.21
D
17.01 17.27
E
1
7.49
7.75
e
1.27 BSC
E
9.02
9.42
L
0.40
0.60
α
0
°
5
°
Inches
Min
Max
24/26
0.0472
0.0059
0.0201
0.0083
0.6899
0.3051
0.002
0.012
0.005
0.670
0.295
0.050 BSC
0.462
0.016
0
°
0.4701
0.0236
5
°
PK13197T40 Rev. C 08/013/99
Plastic TSOP (T - Type II) (MS 24)
Millimeters
Symbol
Min
Max
Ref. Std.
N
A
1.20
A1
0.05
0.15
b
0.30
0.45
c
0.12
0.21
D
18.31 18.51
E
1
10.06 10.26
e
0.80 BSC
E
11.56 11.96
L
0.40
0.60
α
0
°
8
°
Inches
Min
Max
40/44
0.0472
0.002 0.0059
0.012 0.0157
0.005 0.0083
0.721 0.7287
0.396 0.4040
0.031 BSC
0.455
0.016
0
°
0.4709
0.0236
8
°
Plastic TSOP (T - Type II) (MS 24)
Millimeters
Symbol
Min
Max
Ref. Std.
N
A
1.20
A1
0.05
0.15
b
0.30
0.45
c
0.12
0.21
D
20.85 21.05
E
1
10.06 10.26
e
0.80 BSC
E
11.56 11.96
L
0.40
0.60
α
0
°
8
°
Inches
Min
Max
44/50
0.0472
0.002 0.0059
0.012 0.0157
0.005 0.0083
0.821 0.8287
0.396 0.4040
0.031 BSC
0.455 0.4709
0.016 0.0236
0
°
8
°
ISSI
Notes:
1. Controlling dimension: millimeters, unless otherwise
specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E do not include mold flash protru-
sions and
should be measured from the bottom of the
package
.
4. Formed leads shall be planar with respect to one another
within 0.004 inches at the seating plane.
D
SEATING PLANE
b
e
c
1
N/2
N/2+1
N
E1
A1
A
E
L
α
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16100A-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100 | 1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM) |
| IS41LV16105 | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100A-60TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B-50K | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16100B-50KI | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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