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參數(shù)資料
| 型號： | IS41LV16100A-60TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | RES 0805 1/8W 5% 2.4K |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-50/44 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大?。?/td> | 144K |
| 代理商： | IS41LV16100A-60TI |
IS41LV16100A
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
03/02/05
7
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(26)
CAS
Precharge Time
(9, 25)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
Column-Address Hold Time
(referenced to
RAS
)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
(27)
CAS
to Output in Low-Z
(15, 29)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 28, 29)
Output Enable Time
(15, 16)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17, 27)
Write Command Hold Time
(referenced to
RAS
)
(17)
85
—
—
—
50
30
8
9
50
12
0
8
0
8
30
—
50
14
25
10K
—
10K
—
—
37
—
—
—
—
—
110
—
—
—
60
40
10
10
60
20
0
10
0
10
40
—
60
15
30
10K
—
10K
—
—
45
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RAD
t
RAL
t
RPC
t
RSH
t
CLZ
t
CRP
t
OD
t
OE
/t
OEA
t
OEHC
t
OEP
t
OES
t
RCS
t
RRH
14
25
5
14
0
5
3
—
15
10
5
0
0
25
—
—
—
—
—
12
14
—
—
—
—
—
15
30
5
15
0
5
3
—
15
10
5
0
0
30
—
—
—
—
—
12
15
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
—
0
—
ns
t
WCH
t
WCR
8
40
—
—
10
50
—
—
ns
ns
相關PDF資料 |
PDF描述 |
|---|---|
| IS41LV16100A-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100 | 1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100A-60TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B-50K | 功能描述:動態(tài)隨機存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16100B-50KI | 功能描述:動態(tài)隨機存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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