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參數(shù)資料
| 型號： | IS41LV16100A-60TLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-50/44 |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 144K |
| 代理商： | IS41LV16100A-60TLI |
IS41LV16100A
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
03/02/05
3
ISSI
TRUTH TABLE
Function
RAS
LCAS
UCAS
WE
OE
Address t
R
/t
C
I/O
Standby
Read: Word
Read: Lower Byte
H
L
L
H
L
L
H
L
H
X
H
H
X
L
L
X
High-Z
D
OUT
Lower Byte, D
OUT
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
OUT
D
IN
Lower Byte, D
IN
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
ROW/COL
ROW/COL
Read: Upper Byte
L
H
L
H
L
ROW/COL
Write: Word (Early Write)
Write: Lower Byte (Early Write)
L
L
L
L
L
H
L
L
X
X
ROW/COL
ROW/COL
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Read-Write
(1,2)
EDO Page-Mode Read
(2)
1st Cycle:
L
L
L
L
L
L
L
L
L
L
H
→
L
H
H
H
L
L
H
→
L
H
→
L
H
L
X
X
L
→
H
L
L
L
X
X
L
→
H
L
→
H
L
X
X
X
ROW/COL
ROW/COL
NA/COL
NA/NA
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
2nd Cycle:
Any Cycle:
EDO Page-Mode Write
(1)
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
Read
(2)
Write
(1,3)
EDO Page-Mode
(1,2)
Read-Write
Hidden Refresh
L
→
H
→
L
L
→
H
→
L
L
H
→
L
RAS
-Only Refresh
CBR Refresh
(4)
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. EARLY WRITE only.
4. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16100A | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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| IS41LV16105 | 1M x 16 DRAM With Fast Page Mode(3.3V,1Mx16帶快速頁模式動態(tài)RAM) |
| IS41LV16256-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B-50K | 功能描述:動態(tài)隨機存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16100B-50KI | 功能描述:動態(tài)隨機存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16100B-50KI-TR | 功能描述:動態(tài)隨機存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16100B-50KL | 功能描述:動態(tài)隨機存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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