參數(shù)資料
型號(hào)： IS42S32800B-7BLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
封裝： 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90
文件頁(yè)數(shù)： 17/62頁(yè)
文件大?。?/td> 939K
代理商： IS42S32800B-7BLI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev.
B
0
5/24
/06
17
ISSI
IS42S32800B
Data n
0
1
2
3
4
5
6
7
-
255
256
257
-
Column Address
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
-
n+255
n
n+1
-
2 words:
Burst Length
4 words:
8 words:
Full Page: Column address is repeated until terminated.
Data n
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Column Address
A4
A4
A4
A4
A4
A4
A4
A4
Burst Length
A7
A7
A7
A7
A7
A7
A7
A7
A6
A6
A6
A6
A6
A6
A6
A6
A5
A5
A5
A5
A5
A5
A5
A5
A3
A3
A3
A3
A3
A3
A3
A3
A2
A2
A2
A2
A2#
A2#
A2#
A2#
A1
A1
A1#
A1#
A1
A1
A1#
A1#
A0
A0#
A0
A0#
A0
A0#
A0
A0#
4 words
8 words
The Burst Type can be one of two modes,Interleave Mode or Sequential Mode.
Burst Type Field (A3)
—Addressing Sequence of Sequential Mode
An internal column address is performed by increasing the address from the column address which is input to the
device.The internal column address is varied by the Burst Length as shown in the following table.When the value
of column address,(n +m),in the table is larger than 255,only the least significant 8 bits are effective.
A column access is started in the input column address and is performed by inverting the address
bits in the sequence shown in the following table.
Addressing Sequence of Interleave Mode
This field specifies the number of clock cycles from the assertion of the Read command to the first
read data.The minimum whole value of CAS#Latency depends on the frequency of CLK.The
minimum whole value satisfying the following formula must be programmed into this field.
t
CAC
(min)<=CAS#Latency X t
CK
CAS#Latency Field (A6~A4)
A6
0
0
0
0
1
A5
0
0
1
1
X
A4
0
1
0
1
X
CAS#Latency
Reserved
Reserved
2 clocks
3 clocks
Reserved
A3
0
1
Burst Type
Sequential
Interleave
相關(guān)PDF資料
PDF描述
IS42S32800B-7T 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-7TI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-7TL 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-7TLI 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S83200A 256 Mb Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32800B-7BLI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-7BL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-7B-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-7T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-7TI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 8Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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