- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377552 > IS42S83200A (Integrated Silicon Solution, Inc.) 256 Mb Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS42S83200A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256 Mb Synchronous DRAM |
| 中文描述： | 256 MB的同步DRAM |
| 文件頁(yè)數(shù)： | 17/49頁(yè) |
| 文件大?。?/td> | 603K |
| 代理商： | IS42S83200A |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)當(dāng)前第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
11/01/05
17
ISSI
IS42S83200A
(4-bank x 8,388,608 - word x 8-bit)
IS42S16160A
(4-bank x 4,194,304 - word x 16-bit)
WRITE
A WRITE command can be issued to any active bank.
The start address is specified by A0-9(x8),
A0-8(x16).
1st input data is set at the same cycle as the
WRITE.
The consecutive data length to be write is
defined
by the Burst Length. The address sequence
of
burst data is defined by Burst Type. Minmum delay
time of a WRITE command after an ACT command to
the same bank is tRCD. From the last input data to the
PRE command , the write recovery time (tWR) is
required. When A10 is high at a WRITE command ,
auto-precharge (WRITEA) is performed. Any com-
mand (READ,WRITE,PRE,ACT,TBST) to the same
bank is inhibited till the internal precharge is complete.
The internal precharge starts at tWR after the last input
data cycle . The next ACT command can be issued
after (BL+tWR-1+tRP) from the previous WRITEA. In
any case, tRCD+BL+tWR-1
≥
tRASmin must be met.
Write (BL=4)
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
Write with Auto-Precharge (BL=4)
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
ACT
PRE
ACT
Xa
Xa
0
Xa
00
00
tRCD
tRP
Xa
Write
Ya
0
00
Da0
Da1
Da2
Da3
BL
tWR
ACT
ACT
Xa
Xa
Xa
00
00
tRCD
tRP
Xa
Write
Ya
1
00
Da0
Da1
Da2
Da3
BL
tWR
internal precharge starts
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S83200A-75T | 256 Mb Synchronous DRAM |
| IS42S83200A-75TL | 256 Mb Synchronous DRAM |
| IS42VS16100C1-10TLI | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16100C1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16100C1-10T | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S83200A-75T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM |
| IS42S83200A-75TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM |
| IS42S83200B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM |
| IS42S83200B-6T | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S83200B-6TL | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。