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參數(shù)資料
| 型號： | IS42VS16100C1 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 為512k字× 16位× 2銀行（16兆）同步動態(tài)RAM |
| 文件頁數(shù)： | 21/80頁 |
| 文件大?。?/td> | 772K |
| 代理商： | IS42VS16100C1 |
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IS42VS16100C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
04/15/05
21
Device Initialization At Power-On
(Power-On Sequence)
As is the case with conventional DRAMs, the
IS42VS16100C1 product must be initialized by executing
a stipulated power-on sequence after power is applied.
After power is applied and VDD and VDDQ reach their
stipulated voltages, set and hold the CKE and DQM pins
HIGH for 100 μs. Then, execute the precharge command to
precharge both bank. Next, execute the auto-refresh
command twice or more and define the device operation
mode by executing a mode register set command.
The mode register set command can be also set before
auto-refresh command.
Mode Register Settings
The mode register set command sets the mode register.
When this command is executed, pins A0 to A9, A10, and
A11 function as data input pins for setting the register, and
this data becomes the device internal OP code. This OP
code has four fields as listed in the table below.
Note that the mode register set command can be executed
only when both banks are in the idle (inactive) state. Wait
at least two cycles after executing a mode register set
command before executing the next command.
CAS
Latency
During a read operation, the between the execution of the
read command and data output is stipulated as the
CAS
latency. This period can be set using the mode register set
command. The optimal
CAS
latency is determined by the
clock frequency and device speed grade (-10). See the
“Operating Frequency / Latency Relationships” item for
details on the relationship between the clock frequency and
the
CAS
latency. See the table on the next page for details
on setting the mode register.
Input Pin
Field
A11, A10, A9, A8, A7
A6, A5, A4
A3
A2, A1, A0
Mode Options
CAS
Latency
Burst Type
Burst Length
Burst Length
When writing or reading, data can be input or output data
continuously. In these operations, an address is input only
once and that address is taken as the starting address
internally by the device. The device then automatically
generates the following address. The burst length field in
the mode register stipulates the number of data items input
or output in sequence. In the IS42VS16100C1 product, a
burst length of 1, 2, 4, 8, or full page can be specified. See
the table on the next page for details on setting the mode
register.
Burst Type
The burst data order during a read or write operation is
stipulated by the burst type, which can be set by the mode
register set command. The IS42VS16100C1 product
supports sequential mode and interleaved mode burst
type settings. See the table on the next page for details on
setting the mode register. See the “Burst Length and
Column Address Sequence” item for details on DQ data
orders in these modes.
Burst write or single write mode is selected by the OP code
(A11, A10, A9) of the mode register.
A burst write operation is enabled by setting the OP code
(A11, A10, A9) to (0,0,0). A burst write starts on the same
cycle as a write command set. The write start address is
specified by the column address and bank select address
at the write command set cycle.
A single write operation is enabled by setting OP code
(A11, A10, A9) to (0, 0,1). In a single write operation, data
is only written to the column address and bank select
address specified by the write command set cycle without
regard to the bust length setting.
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PDF描述 |
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| IS42VS16100C1-10T | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16100C1-10TI | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16100C1-10TL | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1 | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42VS16100C1-10T | 功能描述:動態(tài)隨機(jī)存取存儲器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42VS16100C1-10TI | 功能描述:動態(tài)隨機(jī)存取存儲器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42VS16100C1-10TI-TR | 功能描述:動態(tài)隨機(jī)存取存儲器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42VS16100C1-10TL | 功能描述:動態(tài)隨機(jī)存取存儲器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42VS16100C1-10TLI | 功能描述:動態(tài)隨機(jī)存取存儲器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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