參數(shù)資料
型號: IS42VS16100C1
廠商: Integrated Silicon Solution, Inc.
英文描述: 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 為512k字× 16位× 2銀行(16兆)同步動態(tài)RAM
文件頁數(shù): 6/80頁
文件大?。?/td> 772K
代理商: IS42VS16100C1
IS42VS16100C1
ISSI
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
04/15/05
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
I
CC1
Operating Current
(1,2)
Test Condition
One Bank Operation,
Burst Length=1
t
RC
t
RC
(min.)
I
OUT
= 0mA
CKE
V
IL
(
MAX
)
Min.
Max.
35
Unit
mA
CAS
Latency = 3
CAS
Latency = 2
40
I
CC2P
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(3)
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Active Standby Current
(3)
(In Non Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Inputs are stable
Operating Current
(In Burst Mode)
(1,3)
t
CK
= 10 ns
0.3
mA
I
CC2PS
CKE
V
IL
(
MAX
)
CLK
V
IL
(
MAX
)
CKE
V
IH
(
MIN
)
CS
V
IH
(
MIN
),
CKE
V
IH
(
MIN
)
Inputs are stable
CKE
V
IL
(
MAX
)
t
CK
=
0.3
mA
I
CC2N
t
CK
= 10 ns
6
mA
I
CC2NS
t
CK
=
2
mA
I
CC3P
t
CK
= 10 ns
6
mA
I
CC3PS
CKE
V
IL
(
MAX
)
CLK
V
IL
(
MAX
)
CKE
V
IH
(
MIN
)
CS
V
IH
(
MIN
)
CKE
V
IH
(
MIN
)
CLK
V
IL
(
MAX
)
t
CK
=
5
mA
I
CC3N
t
CK
= 10 ns
12
mA
I
CC3NS
t
CK
=
10
mA
I
CC4
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
Page Burst
4 Banks activated
t
RC
= t
RC
(
MIN
)
CKE
0.2V
CAS
latency = 2, 3
50
mA
I
CC5
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between V
DD
and Vss for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
3. Inputs changed once every two clocks.
Auto-Refresh Current
Self-Refresh Current
CAS
latency = 2, 3
40
170
mA
μA
相關(guān)PDF資料
PDF描述
IS42VS16100C1-10T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TI 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TL 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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