- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377562 > IS61LPS51236A-250TQI (INTEGRATED SILICON SOLUTION INC) 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS61LPS51236A-250TQI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 512K X 36 CACHE SRAM, 2.6 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 12/34頁 |
| 文件大小： | 229K |
| 代理商： | IS61LPS51236A-250TQI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
02/11/05
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
ISSI
PARTIAL TRUTH TABLE
Function
GW
BWE
BWa
BWb
BWc
BWd
BWe
BWf
BWg
BWh
Read
Read
Write Byte 1
Write All Bytes
Write All Bytes
H
H
H
H
L
H
L
L
L
X
X
H
L
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
TRUTH TABLE
(1-8)
(1CE option)
NEXT CYCLE
ADDRESS
CE
ADSP
ADSC
ADV
WRITE
OE
DQ
Deselected
None
H
X
L
X
X
X
High-Z
Read, Begin Burst
External
L
L
X
X
X
L
Q
Read, Begin Burst
External
L
L
X
X
X
H
High-Z
Write, Begin Burst
External
L
H
L
X
L
X
D
Read, Begin Burst
External
L
H
L
X
H
L
Q
Read, Begin Burst
External
L
H
L
X
H
H
High-Z
Read, Continue Burst
Next
X
H
H
L
H
L
Q
Read, Continue Burst
Next
X
H
H
L
H
H
High-Z
Read, Continue Burst
Next
H
X
H
L
H
L
Q
Read, Continue Burst
Next
H
X
H
L
H
H
High-Z
Write, Continue Burst
Next
X
H
H
L
L
X
D
Write, Continue Burst
Next
H
X
H
L
L
X
D
Read, Suspend Burst
Current
X
H
H
H
H
L
Q
Read, Suspend Burst
Current
X
H
H
H
H
H
High-Z
Read, Suspend Burst
Current
H
X
H
H
H
L
Q
Read, Suspend Burst
Current
H
X
H
H
H
H
High-Z
Write, Suspend Burst
Current
X
H
H
H
L
X
D
Write, Suspend Burst
Current
H
X
H
H
L
X
D
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For
WRITE
, L means one or more byte write enable signals (
BWa-h
) and
BWE
are LOW or
GW
is LOW.
WRITE
= H for all
BWx
,
BWE
,
GW
HIGH.
3.
BWa
enables WRITEs to DQa’s and DQPa.
BWb
enables WRITEs to DQb’s and DQPb.
BWc
enables WRITEs to DQc’s and
DQPc.
BWd
enables WRITEs to DQd’s and DQPd.
BWe
enables WRITEs to DQe’s and DQPe.
BWf
enables WRITEs to DQf’s
and DQPf.
BWg
enables WRITEs to DQg’s and DQPg.
BWh
enables WRITEs to DQh’s and DQPh. DQPa-DQPh are avail-
able on the x72 version. DQPa and DQPb are available on the x18 version. DQPa-DQPd are available on the x36 version.
4. All inputs except
OE
and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation,
OE
must be HIGH before the input data setup time and held HIGH during the
input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8.
ADSP
LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write
enable signals and
BWE
LOW or
GW
LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV 216L | 32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低壓高速CMOS靜態(tài)RAM) |
| IS61LV3216L-15KI | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12KI | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12T | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-12TI | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LPS51236A-250TQI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 18Mb,Pipeline,Sync,512K x 36,250MHz,3.3v or 2.5v I/O,100 Pin TQFP RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51236A-250TQL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51236A-250TQ-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 18Mb,Pipeline,Sync,512K x 36,250MHz,3.3v or 2.5v I/O,100 Pin TQFP RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51236B-200B3LI | 功能描述:IC SRAM 8MBIT 200MHZ 165BGA 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:18M（512K x 36） 速度:200MHz 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:165-TBGA 供應(yīng)商器件封裝:165-TFBGA（13x15） 標(biāo)準(zhǔn)包裝:144 |
| IS61LPS51236B-200TQLI | 功能描述:IC SRAM 18MBIT 200MHZ 100TQFP 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:18M（512K x 36） 速度:200MHz 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-LQFP（14x20） 標(biāo)準(zhǔn)包裝:72 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。