參數(shù)資料
型號(hào): IS61LV10248
廠商: Integrated Silicon Solution, Inc.
英文描述: 1M x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 100萬× 8高速CMOS靜態(tài)RAM
文件頁數(shù): 7/16頁
文件大?。?/td> 123K
代理商: IS61LV10248
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
7
IS61LV10248
ISSI
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z
DATA VALID
CE_RD2.eps
ADDRESS
OE
CE
D
OUT
t
HZCE
READ CYCLE NO. 2
(1,3)
(
CE
and
OE
Controlled)
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (
CE
=
OE
= V
IL
)
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
相關(guān)PDF資料
PDF描述
IS61LV10248-10BI 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV10248-10BLI 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV10248-10MI 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV10248-10T 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV10248-10TI 1M x 8 HIGH-SPEED CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV10248-10BI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV10248-10BI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV10248-10BLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV10248-10MI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV10248-10T 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray