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| 型號(hào)： | IS61LV10248 |
| 廠(chǎng)商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 100萬(wàn)× 8高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 8/16頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | IS61LV10248 |
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8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
IS61LV10248
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8
-10
Symbol
t
WC
t
SCE
t
AW
Parameter
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
8
—
10
—
ns
CE
to Write End
6.5
—
8
—
ns
Address Setup Time
to Write End
6.5
—
8
—
ns
t
HA
t
SA
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Hold from Write End
0
—
0
—
ns
Address Setup Time
0
—
0
—
ns
WE
Pulse Width
6.5
—
8
—
ns
Pulse Width (
OE
= LOW)
8
—
10
—
ns
Data Setup to Write End
5
—
6
—
ns
Data Hold from Write End
0
—
0
—
ns
WE
LOW to High-Z Output
—
3.5
—
5
ns
WE
HIGH to Low-Z Output
2
—
2
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV10248-10BI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10BLI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10MI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10T | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10TI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV10248-10BI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV10248-10BI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV10248-10BLI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10MI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10T | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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