參數(shù)資料
型號: IS61LV5128AL-12T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 512K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 512K X 8 STANDARD SRAM, 12 ns, PDSO44
封裝: PLASTIC, TSOP2-44
文件頁數(shù): 8/9頁
文件大小: 73K
代理商: IS61LV5128AL-12T
8
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. B
07/16/01
IS61LV5128
ISSI
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
V
IH
.
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR2.eps
WRITE CYCLE NO. 2
(1,2)
(
WE
Controlled:
OE
is HIGH During Write Cycle)
WRITE CYCLE NO. 3
(
WE
Controlled:
OE
is LOW During Write Cycle)
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR3.eps
相關(guān)PDF資料
PDF描述
IS61LV5128AL-12TI 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128 512K x 8 High-Speed CMOS Static RAM(512K x 8 高速CMOS靜態(tài)RAM)
IS61LV632A 32K x 32 Synchronous Fast SRAM(32K x 32 同步快速靜態(tài)RAM)
IS61LV6416 64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS靜態(tài)RAM)
IS61LV6424 64K x 24 High-Speed CMOS Static RAM(3.3V,64K x 24 高速CMOS靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV5128AL-12TI 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 44-Pin TSOP-II
IS61LV632A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-4PQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM
IS61LV632A-4TQ 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-5PQ 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 32 SYNCHRONOUS FAST STATIC RAM