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參數(shù)資料
| 型號： | IS61LV6416 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS靜態(tài)RAM) |
| 中文描述： | 64K的× 16高速CMOS靜態(tài)RAM（3.3伏，64K的× 16高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 79K |
| 代理商： | IS61LV6416 |
IS61LV6416
Integrated Silicon Solution, Inc.
Rev. D
10/20/00
7
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8 ns
-10 ns
Min.
-12 ns
Min.
-15 ns
Min.
-20 ns
Min.
Symbol
t
WC
t
SCE
t
AW
Parameter
Min.
Max.
Max.
Max.
Max.
Max.
Unit
Write Cycle Time
8
—
10
—
12
—
15
—
20
—
ns
CE
to Write End
6
—
8
—
9
—
10
—
12
—
ns
Address Setup Time
to Write End
8
—
8
—
9
—
10
—
12
—
ns
t
HA
t
SA
t
PWB
t
PWE
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Hold from Write End
0
—
0
—
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
0
—
0
—
ns
LB
,
UB
Valid to End of Write
7
—
8
—
9
—
10
—
12
—
ns
WE
Pulse Width
6
—
8
—
9
—
10
—
12
—
ns
Data Setup to Write End
6
—
6
—
6
—
7
—
9
—
ns
Data Hold from Write End
0
—
0
—
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
4
—
5
—
6
—
7
—
9
ns
WE
HIGH to Low-Z Output
3
—
3
—
3
—
3
—
3
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV6416-10 | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY |
| IS61LV6416-10B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY |
| IS61LV6416-10BI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV6416-10BLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 64Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV6416-10BLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 64Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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