參數(shù)資料
型號(hào)： IS62WV12816BLL-45B
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
中文描述： 128K X 16 STANDARD SRAM, 45 ns, PBGA48
封裝： 6 X 8 MM, MO-207, MINI, BGA-48
文件頁(yè)數(shù)： 5/17頁(yè)
文件大?。?/td> 112K
代理商： IS62WV12816BLL-45B
IS62WV12816ALL, IS62WV12816BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/08/05
5
IS62WV12816ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
70
15
20
3
3
0.3
0.3
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
Com.
Ind.
Com.
Ind.
Com.
Ind.
mA
I
CC
1
mA
I
SB
1
mA
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
5
10
μA
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
IS62WV12816BLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
45
35
40
25
3
3
0.3
0.3
Max.
55
25
30
20
3
3
0.3
0.3
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
typ.
(2)
Com.
Ind.
Com.
Ind.
mA
I
CC
1
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
mA
I
SB
1
mA
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
typ.
(2)
10
10
3
10
10
3
μA
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 3.0V, T
A
= 25
o
C and not 100% tested.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS62WV12816BLL-45B2 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-45TLI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128K x 16 45ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-45TLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128K x 16 45ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-55B2I 制造商:Integrated Silicon Solution Inc 功能描述:
IS62WV12816BLL-55B2LI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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