參數(shù)資料
型號(hào): IS62WV12816BLL-45B
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
中文描述: 128K X 16 STANDARD SRAM, 45 ns, PBGA48
封裝: 6 X 8 MM, MO-207, MINI, BGA-48
文件頁(yè)數(shù): 10/17頁(yè)
文件大?。?/td> 112K
代理商: IS62WV12816BLL-45B
IS62WV12816ALL, IS62WV12816BLL
ISSI
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/08/05
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(
CS1
Controlled,
OE
= HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
CS2
WE
DOUT
DIN
LB
,
UB
t
PWB
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CS1
, CS2 and
WE
inputs and at
least one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CS1
) [ (
LB
) = (
UB
) ] (
WE
).
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS62WV12816BLL-45B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-45TLI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128K x 16 45ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-45TLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128K x 16 45ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-55B2I 制造商:Integrated Silicon Solution Inc 功能描述:
IS62WV12816BLL-55B2LI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray