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| 型號(hào)： | ISL12022MIBZ-T |
| 廠商： | Intersil |
| 文件頁(yè)數(shù)： | 29/31頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC RTC/CALENDAR TEMP SENS 20SOIC |
| 應(yīng)用說(shuō)明： | Addressing Power Issues in Real Time Clock Appls |
| 產(chǎn)品培訓(xùn)模塊： | Solutions for Industrial Control Applications |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 類型： | 時(shí)鐘/日歷 |
| 特點(diǎn)： | 警報(bào)器，夏令時(shí)，閏年，SRAM |
| 存儲(chǔ)容量： | 128B |
| 時(shí)間格式： | HH:MM:SS（12/24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | I²C，2 線串口 |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 電壓 - 電源，電池： | 1.8 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 20-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 20-SOIC W |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱： | ISL12022MIBZ-TDKR |
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ISL12022M
7
FN6668.9
June 20, 2012
tSU:STA
START Condition Setup Time
SCL rising edge to SDA falling
edge. Both crossing 70% of
VDD.
600
ns
tHD:STA
START Condition Hold Time
From SDA falling edge
crossing 30% of VDD to SCL
falling edge crossing 70% of
VDD.
600
ns
tSU:DAT
Input Data Setup Time
From SDA exiting the 30% to
70% of VDD window, to SCL
rising edge crossing 30% of
VDD.
100
ns
tHD:DAT
Input Data Hold Time
From SCL falling edge
crossing 30% of VDD to SDA
entering the 30% to 70% of
VDD window.
20
900
ns
tSU:STO
STOP Condition Setup Time
From SCL rising edge
crossing 70% of VDD, to SDA
rising edge crossing 30% of
VDD.
600
ns
tHD:STO
STOP Condition Hold Time
From SDA rising edge to SCL
falling edge. Both crossing
70% of VDD.
600
ns
tDH
Output Data Hold Time
From SCL falling edge
crossing 30% of VDD, until
SDA enters the 30% to 70%
of VDD window.
0
ns
tR
SDA and SCL Rise Time
From 30% to 70% of VDD.
20 + 0.1 x Cb
300
ns
tF
SDA and SCL Fall Time
From 70% to 30% of VDD.
20 + 0.1 x Cb
300
ns
Cb
Capacitive Loading of SDA or SCL
Total on-chip and off-chip
10
400
pF
RPU
SDA and SCL Bus Pull-up Resistor
Off-chip
Maximum is determined by
tR and tF.
For Cb = 400pF, max is about
2k~2.5k.
For Cb = 40pF, max is about
15k~20k
1
k
NOTES:
7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
8. Specified at +25°C.
9. Temperature Conversion is inactive below VBAT = 2.7V. Device operation is not guaranteed at VBAT <1.8V.
10. IRQ/FOUT inactive.
11. VDD > VBAT +VBATHYS
12. In order to ensure proper timekeeping, the VDD SR- specification must be followed.
13. Limits should be considered typical and are not production tested.
14. These are I2C specific parameters and are not tested, however, they are used to set conditions for testing devices to validate specification.
15. Minimum VDD and/or VBAT of 1V to sustain the SRAM. The value is based on characterization and it is not tested.
16. To avoid EEPROM recall issues, it is advised to use this minimum power up slew rate. Not tested, shown as typical only.
17. Defined as the deviation from a target oscillator frequency of 32,768.0Hz at room temperature.
18. Defined as the deviation from the room temperature measured 1Hz frequency, VDD = 3.3V, at TA = -40°C to +85°C.
19. Defined as the deviation at room temperature from the measured 1Hz frequency (or equivalent) at VDD = 3.3, over the range of VDD = 2.7V to
VDD =5.5V.
I2C Interface Specifications Test Conditions: VDD = +2.7 to +5.5V, Temperature = -40°C to +85°C, unless otherwise specified.
Boldface limits apply over the operating temperature range, -40°C to +85°C. (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 7)
TYP
(Note 8)
MAX
(Note 7)
UNITS
NOTES
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| ISL12022MIBZ-T7A | 功能描述:IC RTC/CALENDAR TEMP SNSR 20SOIC RoHS:否 類別:集成電路 (IC) >> 時(shí)鐘/計(jì)時(shí) - 實(shí)時(shí)時(shí)鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時(shí)鐘/日歷 特點(diǎn):警報(bào)器，閏年，SRAM 存儲(chǔ)容量:- 時(shí)間格式:HH:MM:SS（12/24 小時(shí)） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
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| ISL12022M-R5421 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High-Accuracy RTC Modules, Feature-Rich RTCs |
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