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參數(shù)資料
| 型號： | IXEN60N120D1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPT IGBT |
| 中文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MINIBLOC-4 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 37K |
| 代理商： | IXEN60N120D1 |
2 - 2
2002 IXYS All rights reserved
IXEN 60N120
IXEN 60N120D1
Component
Symbol
Conditions
Maximum Ratings
T
VJ
T
stg
-40...+150
-40...+150
°
C
°
C
V
ISOL
I
ISOL
≤
1 mA; 50/60 Hz
2500
V~
M
D
mounting torque
teminal connection torque
(M4)
(M4)
1.5
1.5
Nm
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
thCH
with heatsink compound
0.1
K/W
Weight
30
g
M4 screws (4x) supplied
Dim.
Millimeter
Min.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
Inches
Max.
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Min.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
miniBLOC, SOT-227 B
Diode (D1 version only)
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
Symbol
Conditions
typ.
max.
V
F
I
F
= 55 A, V
GE
= 0 V
I
F
= 55 A, V
GE
= 0 V, T
J
= 125°C
2.4
1.9
2.6
V
V
I
F
T
C
= 25°C
T
C
= 90°C
110
60
A
A
I
RM
t
rr
I
F
= 55 A, -di
F
/dt = 400 A/μs, V
R
= 600 V
V
GE
= 0 V, T
J
= 125°C
40
A
200
ns
t
rr
I
F
= 1 A, -di
F
/dt = 100 A/μs, V
R
= 30 V, V
GE
= 0 V
40
ns
R
thJC
0.6
K/W
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