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參數(shù)資料
| 型號(hào)： | IXSH16N60U1 |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為1.8V的絕緣柵雙極晶體管(帶二極管）) |
| 中文描述： | 32 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | IXSH16N60U1 |
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t 300 s, duty cycle 2 %
= I
; V
= 10 V,
3.3
5.0
S
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
50
A
C
ies
C
oes
C
res
920
65
14
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
40
13
18
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
30
30
ns
ns
ns
ns
mJ
100
310
1.9
420
470
2.9
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
30
30
ns
ns
mJ
ns
ns
mJ
0.12
150
510
3.0
R
thJC
1.25 K/W
Inductive load, T
J
= 25 C
I
C
= 16A, V
GE
= 15 V, L = 300 H
V
= 0.8 V
, R
= 22
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125 C
I
C
= 16 A, V
GE
= 15 V, L = 300 H
V
= 0.8 V
, R
= 22
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXSH 16N60U1
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t 300 s, duty cycle d 2 %
1.75
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 64 A/ s
V
= 360 V
I
F
= 1 A; -di/dt = 50 A/ s; V
R
= 30 V
2.5
165
35
A
T
J
= 100 C
T
J
= 25 C
ns
ns
50
R
thJC
2.5 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH17N100 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-247AD |
| IXSH17N100A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-247AD |
| IXSH20N60 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD |
| IXSH20N60A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD |
| IXSH20N60AU1 | 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
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