- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383200 > IXSH20N60U1 (IXYS CORP) Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode PDF資料下載
參數(shù)資料
| 型號： | IXSH20N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IXSH20N60U1 |
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
6
7
S
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
65
A
C
ies
C
oes
C
res
1800
250
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
45
Q
g
Q
ge
Q
gc
90
40
65
120
55
80
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
100
200
450
ns
ns
ns
ns
ns
mJ
20N60U1
20N60AU1
350
2.5
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
100
200
ns
ns
mJ
ns
ns
ns
mJ
mJ
1
1000
1000
600
20N60U1
20N60AU1
20N60U1
20N60AU1
E
off
9
3
5
R
thJC
R
thCK
0.83 K/W
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.6
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 240 A/
μ
s
V
= 360 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V T
J
= 25
°
C
10
A
T
J
=125
°
C
150
35
ns
ns
50
R
thJC
1 K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, T
= 25
°
C
I
= I
, V
= 15 V,
L = 100
μ
H, V
CE
= 0.8 V
CES
,
R
= 39
Remarks: Switching times
may increase for V
(Clamp)
> 0.8 V
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
°
C
I
= I
, V
GE
= 15 V,
L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= 39
Remarks: Switching times
may increase for V
(Clamp)
> 0.8 V
, higher T
J
or
increased R
G
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXSH 20N60U1
IXSH 20N60AU1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSH20N60AU1 | Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
| IXSH24N60AU1 | HiPerFASTTM IGBT with Diode |
| IXSH24N60U1 | HiPerFASTTM IGBT with Diode |
| IXSH24N60 | HiPerFAST IGBT(VCES為600V，VCE(sat)為2.2V的HiPerFAST絕緣柵雙極晶體管) |
| IXSH24N60A | HiPerFAST IGBT(VCES為600V，VCE(sat)為2.7V的HiPerFAST絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH24N60 | 功能描述:IGBT 晶體管 48 Amps 600V 2.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH24N60A | 功能描述:IGBT 晶體管 S-SERIES LO VCE SNGL 600V 24A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH24N60AU1 | 功能描述:IGBT 晶體管 48 Amps 600V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH24N60AU1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-263VAR |
| IXSH24N60B | 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。