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參數資料
| 型號： | IXSN35N100U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT with Diode - High Short Circuit SOA Capability |
| 中文描述： | 34 A, 1000 V, N-CHANNEL IGBT |
| 封裝： | SOT-227B, 4 PIN |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 80K |
| 代理商： | IXSN35N100U1 |
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXSN 35N100U1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
= I
; V
CE
= 20 V,
10
20
S
I
C(on)
V
GE
= 15 V
300
A
C
ies
C
oes
C
res
4.5
0.5
0.09
nF
nF
nF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
180
45
120
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
on
E
off
80
ns
ns
ns
ns
mJ
mJ
150
800
2000
3.2
6.8
R
thJC
R
thCK
0.61 K/W
0.05
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
2.3
V
I
RM
t
rr
I
F
= I
, V
= 0 V, -di
F
/dt = 480 A/
μ
s
T
J
= 125
°
C, V
R
= 360 V
33
A
150
ns
R
thJC
0.7 K/W
Inductive load, T
J
= 125
°
C
I
C
= I
, V
= 15 V,
V
CE
= 0.6 V
CES
, R
on
= 6.8
, R
off
= 22
Remarks: Switching times may increase
for V
(Clamp) > 0.6 V
CES
, higher T
J
or
increased R
G
miniBLOC, SOT-227 B
Dim.
Millimeter
Min.
31.5
7.8
4.0
4.1
4.1
14.9
30.1
38.0
11.8
8.9
0.75
12.6
25.2
1.95
-
Inches
Max.
31.7
8.2
Min.
1.241
0.307
0.158
0.162
0.162
0.587
1.186
1.497
0.465
0.351
0.030
0.496
0.993
0.077
Max.
1.249
0.323
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
-
-
4.3
4.3
15.1
30.3
38.2
12.2
9.1
0.85
12.8
25.4
2.05
5.0
0.169
0.169
0.595
1.193
1.505
0.481
0.359
0.033
0.504
1.001
0.081
0.197
-
M4 screws (4x) supplied
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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相關代理商/技術參數 |
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| IXSN35N120AU1 | 功能描述:IGBT 晶體管 35 Amps 1200V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSN40N60AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | SOT-227B |
| IXSN50N100AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 53A I(C) | SOT-227B |
| IXSN50N120AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 75A I(C) | SOT-227B |
| IXSN50N60BD2 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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