參數(shù)資料
型號： IXTA3N60P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 96K; RAM: 5K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction Execution Time (ns): 50 (@20MHz); Operating Frequency / Supply Voltage: 20MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -40 to 85; Package Code: PLQP0048KB-A (48P6Q-A)
中文描述： 3 A, 600 V, 2.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 232K
代理商： IXTA3N60P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
one or more of the following U.S. patents:
4,850,072
4,881,106
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, Note 1
2.2
3.4
S
C
iss
C
oss
C
rss
411
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
44
pF
6.4
pF
t
d(on)
t
r
t
d(off)
t
f
25
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 30
(External)
25
ns
58
ns
22
ns
Q
g(on)
Q
gs
Q
gd
9.8
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
3.4
nC
3.5
nC
R
thJC
R
thCS
1.80
°
C/W
°
CW
(TO-220)
0.25
Source-Drain Diode Characteristic Values
T
J
= 25
°
C unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
3
A
I
SM
Repetitive
9
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
I
F
= 3 A, -di/dt = 100 A/
μ
s
V
R
= 100 V, V
GS
= 0 V
500
ns
Note 1:
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
Dim. Millimeter
Inches
Min.
Min.
Max.
Max.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
2.19
0.89
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
0.086
0.035
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0
0
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
2.28 BSC
4.57 BSC
9.40 10.42
0.51
0.64
0.89
2.54
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.090 BSC
0.180 BSC
0.370
0.020
0.025
0.035
0.100
0.410
0.040
0.040
0.050
0.115
1.02
1.02
1.27
2.92
TO-252 (IXTY) Outline
Pins:
1 - Gate
4 - Drain
3 - Source
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參數(shù)描述
IXTA42N25P 功能描述:MOSFET 42 Amps 250V 0.084 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA44N15T 功能描述:MOSFET 44 Amps 150V 45 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA44N25T 功能描述:MOSFET 44 Amps 250V 72 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA44N30T 功能描述:MOSFET 44 Amps 300V 85 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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