參數(shù)資料
型號: IXTA3N60P
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 96K; RAM: 5K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction Execution Time (ns): 50 (@20MHz); Operating Frequency / Supply Voltage: 20MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -40 to 85; Package Code: PLQP0048KB-A (48P6Q-A)
中文描述: 3 A, 600 V, 2.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 232K
代理商: IXTA3N60P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Fig. 11. Capacitance
1
10
100
1000
0
5
10
15
V
D S
- Volts
20
25
30
35
40
C
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Q
G
- nanoCoulombs
V
G
V
DS
= 300V
I
D
= 1.5A
I
G
= 10mA
Fig. 7. Input Admittance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
T
J
=125
o
C
25
o
C
-40
o
C
Fig. 8. Transconductance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0
0.5
1
1.5
I
D
- Amperes
2
2.5
3
3.5
4
g
f
T
J
= -40
o
C
25
o
C
125
o
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
1
2
3
4
5
6
7
8
9
0.4
0.5
0.6
V
S D
- Volts
0.7
0.8
0.9
I
S
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 13. Maximum Transient Thermal
Resistance
0.1
1.0
10.0
0.1
1
10
100
1000
Pulse Width - milliseconds
R
(
o
C
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