參數(shù)資料
型號： IXTH30N45
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓450V,導(dǎo)通電阻0.16Ω的N溝道增強型MegaMOSFET)
中文描述： 30 A, 450 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件頁數(shù)： 2/2頁
文件大?。?/td> 37K
代理商： IXTH30N45
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH30N45
IXTH30N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
18
28
S
C
iss
C
oss
C
rss
5680
635
240
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
35
42
110
26
ns
ns
ns
ns
V
GS
= 10 V, V
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1
,
(External)
Q
g(on)
Q
gs
Q
gd
227
29
110
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.35
K/W
K/W
0.15
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0
30
A
I
SM
Repetitive; pulse width limited by T
JM
120
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
850
ns
P
e
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
0.61
20.80
15.75
5.45
4.90
2.70
2.10
0.00
1.90
3.55
5.59
4.32
6.15
Inches
Min.
.190
.090
.075
.045
.075
.024
.819
.620
.215
.193
.106
.083
.00
.075
.140
.220
.170
.242
Max.
5.21
2.54
2.16
1.40
2.13
0.80
21.34
16.13
BSC
5.10
2.90
2.30
0.10
2.10
3.65
6.20
4.83
BSC
Max.
.205
.100
.085
.055
.084
.031
.840
.635
BSC
.201
.114
.091
.004
.083
.144
.244
.190
BSC
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
P
Q
R
S
TO-247 SMD Outline
相關(guān)PDF資料
PDF描述
IXTH30N50 MegaMOS FET
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IXTH3N120 High Voltage Power MOSFETs
IXTH40N30 N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻0.085Ω的N溝道增強型MegaMOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH30N50 功能描述:MOSFET 30 Amps 500V 0.17 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N50L 功能描述:MOSFET 30 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N50L2 功能描述:MOSFET 30.0 Amps 500V 0.002 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N50P 功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N60L2 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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