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參數(shù)資料
| 型號(hào)： | JANSF2N7471T1 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | JANSF2N7471T1 |
IRHMS57160, JANSR2N7471T1
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
45*
ISM
Pulse Source Current (Body Diode)
—
180
VSD Diode Forward Voltage
—
1.2
V
Tj = 25°C, IS = 45A, VGS = 0V
trr
Reverse Recovery Time
—
270
ns
Tj = 25°C, IF = 45A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
2.7
CVDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
—
0.60
RthCS
Case-to-Sink
— 0.21
—
°C/W
RthJA
Junction-to-Ambient
—
48
Typical socket mount
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown —
0.11
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.013
VGS = 12V, ID = 45A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
42
—
S ( )
VDS = 15V, IDS = 45A
IDSS
Zero Gate Voltage Drain Current
—
10
VDS = 80V ,VGS = 0V
——
25
VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
160
VGS =12V, ID = 45A
Qgs
Gate-to-Source Charge
—
55
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
65
td(on)
Turn-On Delay Time
—
35
VDD = 50V, ID = 45A
tr
Rise Time
—
125
VGS =12V, RG = 2.35
td(off)
Turn-Off Delay Time
—
75
tf
Fall Time
—
50
LS + LD
Total Inductance
—
6.8
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
—
6270
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
1620
—
pF
f = 100KHz
Crss
Reverse Transfer Capacitance
—
35
—
Rg
Internal Gate Resistance
—
1.0
—
f = 1.0MHz, open drain
nA
nH
ns
A
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
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