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參數資料
| 型號： | JANSF2N7471T1 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-3 |
| 文件頁數： | 8/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | JANSF2N7471T1 |
IRHMS57160, JANSR2N7471T1
Pre-Irradiation
8
www.irf.com
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 0.49 mH
Peak IL = 45A, VGS = 12V
ISD ≤ 45A, di/dt ≤ 630A/s,
VDD ≤ 100V, TJ ≤ 150°C
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/2006
Case Outline and Dimensions — Low-Ohmic TO-254AA
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C
14.48 [.570]
12.95 [.510]
3X
0.36 [.014]
B A
1.14 [.045]
0.89 [.035]
2X
3.81 [.150]
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
12
3
13.84 [.545]
13.59 [.535]
0.84 [.033]
MAX.
B
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
3. CONTROLLING DIMENSION: INCH.
NOTES:
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
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